Gaussian Process Regression for Virtual Metrology of Plasma Etch

Gaussian Process Regression for Virtual Metrology of Microchip Quality and the Resulting Strategic Sampling Scheme APPROVED BY SUPERVISING COMMITTEE: Dragan Djurdjanovic, Supervisor Roman Garnett Gaussian Process Regression for Virtual Metrology of Microchip Quality and the Resulting Strategic Sampling Scheme

Real-time Virtual Metrology and Control of Plasma Electron Density in an Industrial Plasma Etch Chamber ?

Plasma etching is a semiconductor manufacturing process during which material is removed from the surface of silicon wafers using gases in plasma form. A host of chemical and electrical complexities make the etch process notoriously difficult to model and troublesome to control. This work demonstrates the use of a real-time model predictive control scheme to maintain a consistent plasma electro...

Endpoint in plasma etch process using new modified w-multivariate charts and windowed regression

Endpoint detection is very important undertaking on the side of getting a good understanding and figuring out if a plasma etching process is done in the right way, especially if the etched area is very small (0.1%). It truly is a crucial part of supplying repeatable effects in every single wafer. When the film being etched has been completely cleared, the endpoint is reached. To ensure the desi...

Oxide Etch Rate Estimation Using Plasma Impedance Monitoring

The oxide etch rate of plasma etch tools is estimated from plasma impedance monitoring data. Linear statistical modelling and stepwise regression are used to generate predictions of the mean and range oxide etch rate. The relationship of the mean etch rate to yield is explored for one processing step. Potentials for advanced process control of the etch tools are presented.

VERY DEEP TRENCHES IN SILICON WAFER USING DRIE METHOD WITH ALUMINUM MASK

Abstract: In this paper, a DRIE process for fabricating MEMS silicon trenches with a depth of more than 250 m is described. The DRIE was produced in oxygen-added sulfur hexafluoride (SF6) plasma, with sample cooling to cryogenic temperature using a Plasmalab System 100 ICP 180 at different RF powers. A series of experiments were performed to determine the etch rate and selectivity of the some m...